croissance épitaxiale

CONT: Dans le cas de la croissance épitaxiale, le substrat sert de germe à la croissance mono-cristalline pouvant constituer, à elle seule, la totalité de la partie active de la photopile.

OBS: Usually silicon is grown on a silicon substrate. However, silicon and other semiconductor materials may be grown on a substrate as suitable crystallography, such as sapphire (silicon-on-sapphire). It is a process by which a single crystal of material is deposited and grows upon the surface of a substrate. The material is usually of a different resistivity or conductivity than the substrate.